Benefits from Using Very Thin Channel Layer for TFTs

It is known from many published data on amorphous or polycrystalline silicon and metal oxides based Thin Film Transistors (TFTs) that their electrical parameters improve when decreasing the thickness of channel layer. The origin this improvement discussed here through electrostatic arguments only. In particular, it shown behavior subthreshold swing with does not depend type materials. material its defects determine only importance but trend towards better parameters. Meanwhile, in general, stability under gate stress enhances too. improved explained by reduced electronic charge inside layer, leading to a lower injection electrons insulator.